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DMT6015LPSW

60V N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This new generation n-channel enhancement mode MOSFET is designed to minimize R_DS(ON)yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switches.

Feature(s)

Thermally Efficient Package-Cooler Running Applications
High Conversion Efficiency
Low R_DS(ON)– Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed
< 1.1mm Package Profile – Ideal for Thin Applications
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

Motor controls
DC-DC converters
Power management

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)	Standard
AEC Qualified	No
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	16 ±V
\|I_DS\| @T_C = +25°C (A)	31 A
P_D @T_A = +25°C (W)	1.16 W
P_D @T_C = +25°C (W)	2.7 W
R_DS(ON)Max@ V_GS(10V) (mΩ)	16 mΩ
\|V_GS(TH)\| Min (V)	0.5 V
\|V_GS(TH)\| Max (V)	2.5 V
Q_G Typ @ \|V_GS\| = 10V (nC)	18.9 nC
C_ISS Typ (pF)	1103 pF
C_ISS Condition @\|V_DS\| (V)	30 V

Technical Documents

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2770	2025-10-30	2025-10-30	Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products