Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. PowerDI5060-8
60V N-Channel Enhancement Mode MOSFET
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This new generation n-channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switches.
Compliance (Only Automotive Supports PPAP) |
Standard |
|---|---|
AEC Qualified |
No |
Polarity |
N |
ESD Diodes (Y|N) |
Yes |
|VDS| (V) |
60 V |
|VGS| (±V) |
16 ±V |
|IDS| @TA = +25°C (A) |
10.6 A |
|IDS| @TC = +25°C (A) |
31 A |
PD @TA = +25°C (W) |
2.7 W |
RDS(ON)Max@ VGS(10V) (mΩ) |
16 mΩ |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
24 mΩ |
|VGS(TH)| Max (V) |
2.5 V |
QG Typ @ |VGS| = 4.5V (nC) |
8.9 nC |
QG Typ @ |VGS| = 10V (nC) |
18.9 nC |
CISS Typ (pF) |
1103 pF |
CISS Condition @|VDS| (V) |
30 V |
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A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2770 | 2025-10-30 | 2025-10-30 | Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products |
| PCN-2495 | 2021-03-31 | 2021-07-01 | Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products |
