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DMT6012LFV

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
Low RDS(ON) – Ensures On-State Losses are Minimized
Small Form Factor Thermally Efficient Package Enables Higher Density End Products
Occupies just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product
ESD Protected Gate

Application(s)

Backlighting
Power Management Functions
DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_C = +25°C (A)	43.3 A
P_D @T_A = +25°C (W)	1.95 W
P_D @T_C = +25°C (W)	33.78 W
R_DS(ON)Max@ V_GS(10V)(mΩ)	12 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	15 mΩ
\|V_GS(TH)\| Max (V)	2.5 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	10.7 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	22.2 nC
C_ISS Typ (pF)	1522 pF
C_ISS Condition @\|V_DS\| (V)	30 V

Technical Documents

SPICE Model

DMT6012LFV.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile