Diodes Incorporated — Analog and discrete power solutions
U DFN2020 6 Type F

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. U-DFN2020-6 (Type F)

U DFN2020 6 Type F

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. U-DFN2020-6 (Type F)

U DFN2020 6 Type F

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. U-DFN2020-6 (Type F)

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DMT6012LFDF

60V N-Channel Enhancement Mode MOSFET

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Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Standard

AEC Qualified

No

Polarity

N

ESD Diodes (Y|N)

No

|VDS| (V)

60 V

|VGS| (±V)

20 ±V

|IDS| @TA = +25°C (A)

9.5 A

PD @TA = +25°C (W)

1.9 W

PD @TC = +25°C (W)

11 W

RDS(ON)Max@ VGS(10V)  (mΩ)

14 mΩ

RDS(ON)Max@ VGS(4.5V)  (mΩ)

21 mΩ

|VGS(TH)| Max (V)

2.3 V

QG Typ @ |VGS| = 4.5V (nC)

7.3 nC

QG Typ @ |VGS| = 10V (nC)

13.6 nC

CISS Typ (pF)

785 pF

CISS Condition @|VDS| (V)

30 V

Technical Documents

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2690 2024-05-29 2024-08-29 Qualification of Diodes’ subcontractor Eris Technology Corporation (Eris) in Taoyuan, Taiwan as Additional Assembly & Test Site and Diodes internal JKFAB in HsinChu, Taiwan as additional wafer source for Select Discrete Products.