DMT6009LJ3 (Not Recommended for new design)

NRND = Not Recommended for New Design

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
Low RDS(ON)—Ensures On State Losses Are Minimized
Excellent Qgd x RDS(ON) Product (FOM)
Advanced Technology for DC-DC Converters
Small Form Factor Thermally Efficient Package Enables Higher Density End Products

Application(s)

Power Management Functions
DC-DC Converters
Backlighting

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP)	Standard
C_ISS Condition @\|V_DS\| (V)	30
C_ISS Typ (pF)	1925
Compliance (Only Automotive(Q) supports PPAP)	Standard
ESD Diodes (Y\|N)	No
\|I_DS\| @T_C = +25°C (A)	74.5
P_D @T_A = +25°C (W)	2.9
P_D @T_C = +25°C (W)	83.3
Polarity	N
Q_G Typ @ \|V_GS\| = 10V (nC)	33.5
Q_G Typ @ \|V_GS\| = 4.5V (nC)	15.6
AEC Qualified	No
R_DS(ON)Max@ V_GS(10V)(mΩ)	10
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	12.8
\|V_DS\| (V)	60
\|V_GS\| (±V)	16
\|V_GS(TH)\| Max (V)	2

Technical Documents

SPICE Model

DMT6009LJ3 .spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2579	2022-08-29	2023-02-28	Device End of Life (EOL)