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DMT6005LCT

60V N-Channel Enhancement Mode MOSFET

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Description

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications. 

Feature(s)

  • 100% Unclamped Inductive Switching – ensures more reliable and robust end application
  • Low Input Capacitance
  • Low Input/Output Leakage

Application(s)

  • Engine Management Systems
  • Body Control Electronics
  • DC-DC Converters

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP) Standard
AEC Qualified Yes
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TC = +25°C (A) 100 A
PD @TA = +25°C (W) 2.3 W
PD @TC = +25°C (W) 104 W
RDS(ON)Max@ VGS(10V)  (mΩ) 6 mΩ
RDS(ON)Max@ VGS(4.5V)  (mΩ) 10 mΩ
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 4.5V (nC) 23.1 nC
QG Typ @ |VGS| = 10V (nC) 47.1 nC
CISS Typ (pF) 2962 pF
CISS Condition @|VDS| (V) 30 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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