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DMT4008LFV

40V N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

100% Unclamped Inductive Switching – ensures more reliable and robust end application
Low On-Resistance
Low Input Capacitance

Application(s)

Power Management Functions
DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	40 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	12.1 A
\|I_DS\| @T_C = +25°C (A)	54.8 A
P_D @T_A = +25°C (W)	1.9 W
P_D @T_C = +25°C (W)	35.7 W
R_DS(ON)Max@ V_GS(10V)(mΩ)	7.9 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	12 mΩ
\|V_GS(TH)\| Max (V)	3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	8.3 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	17.1 nC
C_ISS Typ (pF)	1179 pF
C_ISS Condition @\|V_DS\| (V)	20 V

Technical Documents

SPICE Model

DMT4008LFV.spice.txt

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2425	2019-10-04	2020-01-04	Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and Additional Wafer Source for Select Products.