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DMT4005SCT

40V N-Channel Enhancement Mode MOSFET

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Description

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications. 

Feature(s)

  • 100% Unclamped Inductive Switching – ensures more reliable and robust end application
  • Low Input Capacitance
  • Low Input/Output Leakage

Application(s)

  • Engine Management Systems
  • Body Control Electronics
  • DC-DC Converters

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Standard

AEC Qualified

Yes

Polarity

N

ESD Diodes (Y|N)

No

|VDS| (V)

40 V

|VGS| (±V)

20 ±V

|IDS| @TC = +25°C (A)

100 A

PD @TA = +25°C (W)

2.3 W

PD @TC = +25°C (W)

104 W

RDS(ON)Max@ VGS(10V)  (mΩ)

4.7 mΩ

|VGS(TH)| Min (V)

2 V

|VGS(TH)| Max (V)

4 V

QG Typ @ |VGS| = 10V (nC)

49.1 nC

CISS Typ (pF)

3062 pF

CISS Condition @|VDS| (V)

20 V

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2770 2025-10-30 2025-10-30 Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products