Back to MOSFET Master Table

DMT31M6LPS

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

Contact Sales

Description

This MOSFET is designed to minimize the on-state resistance (R_DS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

Low R_DS(ON) – Minimizes On-State Losses
Excellent Q_GD x R_DS(ON) Product (FOM)
Advanced Technology for DC-DC Converters
Small Form Factor Thermally Efficient Package Enables Higher Density End Products
100% Unclamped Inductive Switching – Ensures More Reliability

Application(s)

Backlighting
Power Management Functions
DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	30 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	35.8 A
\|I_DS\| @T_C = +25°C (A)	150 A
P_D @T_A = +25°C (W)	2.5 W
P_D @T_C = +25°C (W)	100 W
R_DS(ON)Max@ V_GS(10V)(mΩ)	1.35 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	2.4 mΩ
\|V_GS(TH)\| Min (V)	1 V
\|V_GS(TH)\| Max (V)	3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	59.1 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	123 nC
C_ISS Typ (pF)	7019 pF
C_ISS Condition @\|V_DS\| (V)	15 V

Technical Documents

SPICE Model

DMT31M6LPS.spice.txt

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2628	2023-05-11	2023-08-11	Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source for Select Discrete Products
PCN-2425	2019-10-04	2020-01-04	Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and Additional Wafer Source for Select Products.