30V N-Channel Enhancement Mode MOSFET
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
Compliance (Only Automotive Supports PPAP) |
Standard |
|---|---|
AEC Qualified |
No |
Polarity |
N |
ESD Diodes (Y|N) |
No |
|VDS| (V) |
30 V |
|VGS| (±V) |
20 ±V |
|IDS| @TA = +25°C (A) |
34 A |
|IDS| @TC = +25°C (A) |
120 A |
PD @TA = +25°C (W) |
3.2 W |
PD @TC = +25°C (W) |
- W |
RDS(ON)Max@ VGS(10V) (mΩ) |
1.6 mΩ |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
2.6 mΩ |
RDS(ON)Max@ VGS(2.5V) (mΩ) |
- mΩ |
RDS(ON)Max@ VGS(1.8V) (mΩ) |
- mΩ |
|VGS(TH)| Min (V) |
1.2 V |
|VGS(TH)| Max (V) |
2.5 V |
QG Typ @ |VGS| = 4.5V (nC) |
18.2 nC |
QG Typ @ |VGS| = 10V (nC) |
37.3 nC |
CISS Typ (pF) |
2955 pF |
CISS Condition @|VDS| (V) |
15 V |
Something went wrong with your request. Please try again later. If this problem continues, please contact Diodes support for assistance.
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2770 | 2025-10-30 | 2025-10-30 | Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products |