Diodes Incorporated
PowerDI5060 8

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DMT30M9LPS

30V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications.

Feature(s)

  • 100% Unclamped Inductive Switching—Ensures More Reliable and Robust End Application
  • Thermally Efficient Package-Cooler Running Applications
  • High-Conversion Efficiency
  • Low RDS(ON)—Minimizes On-State Losses
  • <1.1mm Package Profile—Ideal for Thin Applications
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)

Application(s)

  • Engine Management Systems
  • Body Control Electronics
  • DC-DC Converters
  • Synchronous Rectification

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 30 V
|VGS| (±V) 20 ±V
|IDS| @TC = +25°C (A) 100 A
PD @TA = +25°C (W) 2.6 W
PD @TC = +25°C (W) 1.1 W
RDS(ON)Max@ VGS(10V)(mΩ) 1 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 1.6 mΩ
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 4.5V (nC) 71.3 nC
QG Typ @ |VGS| = 10V (nC) 160.5 nC
CISS Typ (pF) 12121 pF
CISS Condition @|VDS| (V) 20 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

FAQs

Related Application FAQs