Diodes Incorporated — Analog and discrete power solutions
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DMT3020LFVW

30V N-Channel Enhancement Mode MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low RDS(ON) – Ensures On State Losses Are Minimized
  • Small Form Factor Thermally Efficient Package Enables Higher Density End Products
  • Occupies Just 33% of The Board Area Occupied by SO-8 Enabling Smaller End Product
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device

Application(s)

  • Power Management Functions
  • Analog Switch

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP) Standard
AEC Qualified No
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 30 V
|VGS| (±V) 20 ±V
|IDS| @TC = +25°C (A) 38 A
PD @TA = +25°C (W) 2 W
RDS(ON)Max@ VGS(10V)  (mΩ) 17 mΩ
RDS(ON)Max@ VGS(4.5V)  (mΩ) 28 mΩ
|VGS(TH)| Max (V) 2.5 V
QG Typ @ |VGS| = 4.5V (nC) 3.6 nC
QG Typ @ |VGS| = 10V (nC) 7 nC
CISS Typ (pF) 393 pF
CISS Condition @|VDS| (V) 15 V

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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