30V N-Channel Enhancement Mode MOSFET
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This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
| Compliance (Only Automotive Supports PPAP) | Standard |
|---|---|
| AEC Qualified | Yes |
| Polarity | N |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 30 V |
| |VGS| (±V) | 20 ±V |
| |IDS| @TA = +25°C (A) | 12 A |
| |IDS| @TC = +25°C (A) | 50 A |
| PD @TA = +25°C (W) | 2.3 W |
| PD @TC = +25°C (W) | 35.7 W |
| RDS(ON)Max@ VGS(10V) (mΩ) | 11 mΩ |
| RDS(ON)Max@ VGS(4.5V) (mΩ) | 13 mΩ |
| |VGS(TH)| Max (V) | 3 V |
| QG Typ @ |VGS| = 4.5V (nC) | 5.8 nC |
| QG Typ @ |VGS| = 10V (nC) | 12 nC |
| CISS Typ (pF) | 823 pF |
| CISS Condition @|VDS| (V) | 15 V |
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