Diodes Incorporated — Analog and discrete power solutions
PowerDI5060 8

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

PowerDI5060-8.png
Back to MOSFET Master Table

DMT3004LPS

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low RDS(ON) – Minimizes On-State Losses
  • Excellent QGD x RDS(ON) Product (FOM)
  • Advanced Technology for DC-DC Converters
  • Small Form Factor Thermally Efficient Package Enables Higher Density End Products
  • 100% Unclamped Inductive Switching – Ensures More Reliability
  • Lead-Free Finish; RoHS Compliant
  • Halogen and Antimony Free. “Green” Device
  • Qualified to AEC-Q101 Standards for High Reliability

Application(s)

  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 30 V
|VGS| (±V) 20, 16 ±V
|IDS| @TA = +25°C (A) 21
|IDS| @TC = +25°C (A) 140
PD @TA = +25°C (W) 2.7
PD @TC = +25°C (W) 113
RDS(ON)Max@ VGS(10V)(mΩ) 3.8 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 6 mΩ
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 10V (nC) 43.7 nC
CISS Typ (pF) 2370 pF
CISS Condition @|VDS| (V) 15 V

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2439 2019-12-05 2020-03-05 Qualification of "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site, Using Gold
Bond Wire, and as an Additional Wafer Back Grinding and Back Metal Process Source on Select MOSFET Products
PCN-2403 2019-03-25 2019-06-19 Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, Additional Wafer Source, or Additional Assembly and Test site for Select Products.