Diodes Incorporated
PowerDI5060 8

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DMT2004UPS

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low RDS(ON) – Minimizes On-State Losses
  • Excellent Qgd x RDS(ON) Product (FOM)
  • Advanced Technology for DC-DC Converters
  • Small Form Factor Thermally Efficient Package Enables Higher Density End Products
  • 100% Unclamped Inductive Switching – Ensures More Reliability

Application(s)

  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 24 V
|VGS| (±V) 12 ±V
|IDS| @TC = +25°C (A) 80 A
PD @TA = +25°C (W) 3 W
RDS(ON)Max@ VGS(10V)(mΩ) 5 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 6.5 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 10 mΩ
|VGS(TH)| Min (V) 0.55 V
|VGS(TH)| Max (V) 1.45 V
QG Typ @ |VGS| = 4.5V (nC) 29.6 nC
QG Typ @ |VGS| = 10V (nC) 53.7 nC
CISS Typ (pF) 1683 pF
CISS Condition @|VDS| (V) 15 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2439 2019-12-05 2020-03-05 Qualification of "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site, Using Gold
Bond Wire, and as an Additional Wafer Back Grinding and Back Metal Process Source on Select MOSFET Products
PCN-2403 2019-03-25 2019-06-19 Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, Additional Wafer Source, or Additional Assembly and Test site for Select Products.

FAQs

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