Diodes Incorporated — Analog and discrete power solutions
SO 8

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SO-8

Back to MOSFET Master Table

DMT15H053SSS

150V N-Channel Enhancement Mode MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • High Conversion Efficiency
  • Low RDS(ON) – Minimizes On-State Losses
  • Low Input Capacitance
  • Fast Switching Speed
  • 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)

Application(s)

  • High Frequency Switching
  • Synchronous Rectification
  • DC-DC Converters

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP) Standard
AEC Qualified No
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 150 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 5.2 A
|IDS| @TC = +25°C (A) 15 A
PD @TA = +25°C (W) 2 W
RDS(ON)Max@ VGS(10V)  (mΩ) 53 mΩ
|VGS(TH)| Max (V) 4 V
QG Typ @ |VGS| = 10V (nC) 11.5 nC
CISS Typ (pF) 814 pF
CISS Condition @|VDS| (V) 75 V

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Purchase & Availablity