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DMT15H017LPSW

150V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8

Datasheet

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Description

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch.

Feature(s)

100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
Thermally Efficient Package-Cooler Running Applications
High Conversion Efficiency
Low RDS(ON) – Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed
<1.1mm Package Profile – Ideal for Thin Applications (PowerDI®)
Lead-Free Finish; RoHS Compliant
Halogen and Antimony Free. “Green” Device
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

Synchronous Rectification
Power Switching
Class D Audio Amplifier

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	150 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	9.4 A
\|I_DS\| @T_C = +25°C (A)	58 A
P_D @T_A = +25°C (W)	2.3 W
P_D @T_C = +25°C (W)	89 W
R_DS(ON)Max@ V_GS(10V)(mΩ)	17.5 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	25.5 mΩ
\|V_GS(TH)\| Max (V)	2.6 V
Q_G Typ @ \|V_GS\| = 10V (nC)	50 nC
C_ISS Typ (pF)	3369 pF
C_ISS Condition @\|V_DS\| (V)	75 V

Technical Documents

SPICE Model

DMT15H017LPSW.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile