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DMT12H007SPS

120V N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance(RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

100% Unclamped Inductive Switching (UIS) Test in Production –
Ensures More Reliable and Robust End Application
Thermally Efficient Package – Cooler Running Applications
High Conversion Efficiency
Low RDS(ON) – Minimizes On-State Losses
<1.1mm Package Profile – Ideal for Thin Applications
Lead-Free Finish; RoHS Compliant
Halogen and Antimony Free. “Green” Device
For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and
manufactured in IATF 16949 certified facilities), please
contact us or your local Diodes representative.
https://www.diodes.com/quality/product-definitions/

Application(s)

Switching
DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	120 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_C = +25°C (A)	80 A
P_D @T_A = +25°C (W)	2.9 W
P_D @T_C = +25°C (W)	104 W
R_DS(ON)Max@ V_GS(10V)(mΩ)	8.9 mΩ
\|V_GS(TH)\| Max (V)	4 V
Q_G Typ @ \|V_GS\| = 10V (nC)	44 nC
C_ISS Typ (pF)	3142 pF
C_ISS Condition @\|V_DS\| (V)	60 V

Technical Documents

SPICE Model

DMT12H007SPS.spice.txt

Recommended Soldering Techniques

TN1.pdf