Diodes Incorporated
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DMT10H075LE

100V N-Channel Enhancement Mode MOSFET

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Description

This N-channel MOSFET provides users with a competitive specification, offering efficient power-handling capability, high impedance, and is free from thermal runaway and thermally induced secondary breakdown.

Feature(s)

  • Low Gate Drive
  • Low Input Capacitance
  • Fast Switching Speed
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Load Switching
  • Uninterrupted Power Supply

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 100 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 4 A
PD @TC = +25°C (W) 2.4 W
RDS(ON)Max@ VGS(10V)(mΩ) 65 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 105 mΩ
|VGS(TH)| Min (V) 1 V
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 4.5V (nC) 2.5 nC
QG Typ @ |VGS| = 10V (nC) 4.5 nC
CISS Typ (pF) 228 pF
CISS Condition @|VDS| (V) 50 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf