Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. PowerDI3333-8

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DMT10H072LFV

100V N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

Low RDS(ON) – Ensures On-State Losses are Minimized
Small Form Factor Thermally Efficient Package Enables Higher Density End Products
Occupies just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product
Low On-Resistance

Application(s)

Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)	Standard
AEC Qualified	No
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	100 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	4.7 A
\|I_DS\| @T_C = +25°C (A)	20 A
P_D @T_A = +25°C (W)	2 W
P_D @T_C = +25°C (W)	37.8 W
R_DS(ON)Max@ V_GS(10V) (mΩ)	62 mΩ
R_DS(ON)Max@ V_GS(4.5V) (mΩ)	109 mΩ
\|V_GS(TH)\| Max (V)	2.8 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	2.5 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	4.5 nC
C_ISS Typ (pF)	228 pF
C_ISS Condition @\|V_DS\| (V)	50 V

Technical Documents

SPICE Model

DMT10H072LFV.spice.txt

Recommended Soldering Techniques

TN1.pdf