Diodes Incorporated
U DFN2020 6 Type F

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U-DFN2020-6-Type-F.png
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DMT10H072LFDFQ

100V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use. 

Feature(s)

  • 0.6mm Profile – Ideal for Low Profile Applications
  • PCB Footprint of 4mm2
  • Low On-Resistance
  • 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The DMT10H072LFDFQ is suitable for automotive applications requiring specific change control and is AECQ101 qualified, is PPAP capable, and is manufactured in IATF16949:2016 certified facilities.

Application(s)

  • Power Management Functions
  • Battery Operated Systems and Solid-State Relays
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 100 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 4 A
PD @TA = +25°C (W) 1.8 W
RDS(ON)Max@ VGS(10V)(mΩ) 62 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 110 mΩ
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 4.5V (nC) 2.5 nC
QG Typ @ |VGS| = 10V (nC) 4.5 nC
CISS Typ (pF) 228 pF
CISS Condition @|VDS| (V) 50 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC