Diodes Incorporated
U DFN2020 6 Type F

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DMT10H052LFDF

100V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • 0.6mm Profile – Ideal for Low Profile Applications
  • PCB Footprint of 4mm2
  • Low On-Resistance
  • 100% Unclamped Inductive Switching (UIS) Test in Production –
  • Ensures More Reliable and Robust End Application
  • Totally Lead-Free & Fully RoHS Compliant 
  • Halogen and Antimony Free. “Green” Device 
  • For automotive applications requiring specific change
    control (i.e.: parts qualified to AEC-Q100/101/200, PPAP
    capable, and manufactured in IATF 16949 certified facilities),
    please refer to the related automotive grade (Q-suffix) part. A
    listing can be found at
    https://www.diodes.com/products/automotive/automotiveproducts/
  • This part is qualified to JEDEC standards (as references in
    AEC-Q) for High Reliability.
    https://www.diodes.com/quality/product-definitions/

Application(s)

  • Power Management Functions
  • Battery Operated Systems and Solid-State Relays
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 100 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 5 A
PD @TA = +25°C (W) 1.9 W
RDS(ON)Max@ VGS(10V)(mΩ) 52 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 75 mΩ
|VGS(TH)| Max (V) 2.5 V
QG Typ @ |VGS| = 4.5V (nC) 2.9 nC
QG Typ @ |VGS| = 10V (nC) 5.4 nC
CISS Typ (pF) 258 pF
CISS Condition @|VDS| (V) 50 V

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Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

FAQs

Related Application FAQs