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DMT10H025SSS

100V N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and making it ideal for high efficiency power management.

Feature(s)

100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
High Conversion Efficiency
Low RDS(ON) – Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant
Halogen and Antimony Free. “Green” Device

Application(s)

High Frequency Switching
Synchronous Rectification
DC-DC Converters

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)	Standard
AEC Qualified	No
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	100 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	7.4 A
P_D @T_A = +25°C (W)	1.9 W
P_D @T_C = +25°C (W)	12.9 W
R_DS(ON)Max@ V_GS(10V) (mΩ)	23 mΩ
R_DS(ON)Max@ V_GS(4.5V) (mΩ)	30 (@6V) mΩ
\|V_GS(TH)\| Max (V)	4 V
Q_G Typ @ \|V_GS\| = 10V (nC)	21.4 nC
C_ISS Typ (pF)	1544 pF
C_ISS Condition @\|V_DS\| (V)	50 V

Technical Documents

SPICE Model

DMT10H025SSS.spice.txt

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2770	2025-10-30	2025-10-30	Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products