Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

PowerDI5060-8.png

Back to MOSFET Master Table

DMT10H015SPS

100V N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

Contact Sales

Description

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize R_DS(ON)yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch.

Feature(s)

100% Unclamped Inductive Switching (UIS) Test in Production— Ensures More Reliable and Robust End Application
Thermally Efficient Package—Cooler Running Applications
High Conversion Efficiency
Low R_DS(ON)—Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/.
This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/

Application(s)

Motor controls
DC-DC converters
Power managements

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	100 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	7.6 A
\|I_DS\| @T_C = +25°C (A)	46 A
P_D @T_A = +25°C (W)	1.3 W
P_D @T_C = +25°C (W)	46 W
R_DS(ON)Max@ V_GS(10V)(mΩ)	14.5 mΩ
\|V_GS(TH)\| Max (V)	4 V
Q_G Typ @ \|V_GS\| = 10V (nC)	30.1 nC
C_ISS Typ (pF)	2343 pF
C_ISS Condition @\|V_DS\| (V)	50 V

Technical Documents

SPICE Model

DMT10H015SPS.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile