Diodes Incorporated — Analog and discrete power solutions
TO252 DPAK

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. TO252 (DPAK)

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DMT10H015SK3

100V N-Channel Enhancement Mode MOSFET

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Overview

100V N-Channel Enhancement Mode MOSFET

Description

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high-efficiency power management applications.

Feature(s)

  • 100% Unclamped Inductive Switching (UIS) Test in Production— Ensures More Reliable and Robust End Application
  • Low RDS(ON) – Minimizes Power Losses
  • Low Qg –Minimizes Switching Losses
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)

Application(s)

  • Power Management Functions
  • DC-DC Converters
  • Backlighting

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Standard

AEC Qualified

No

Polarity

N

ESD Diodes (Y|N)

No

|VDS| (V)

100 V

|VGS| (±V)

20 ±V

|IDS| @TC = +25°C (A)

54 A

PD @TA = +25°C (W)

2.9 W

RDS(ON)Max@ VGS(10V)  (mΩ)

14 mΩ

RDS(ON)Max@ VGS(4.5V)  (mΩ)

20 (@6V) mΩ

|VGS(TH)| Max (V)

4 V

QG Typ @ |VGS| = 10V (nC)

30.1 nC

CISS Typ (pF)

2343 pF

CISS Condition @|VDS| (V)

50 V

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2770 2025-10-30 2025-10-30 Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products
PCN-2761 2025-10-15 2025-10-15 Add Ejector Pin Mark on TO-252 Packaged Products Manufactured at Diodes Internal Assembly and Test Site (SAT)