Diodes Incorporated
TO252 DPAK

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DMT10H015LK3

100V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.

Feature(s)

  • 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
  • Low RDS(ON) – Minimises Power Losses
  • Low QG – Minimises Switching Losses

Application(s)

  • Power Management Functions
  • DC-DC Converters
  • Backlighting

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 100 V
|VGS| (±V) 20 ±V
|IDS| @TC = +25°C (A) 52.7
PD @TA = +25°C (W) 2.9
RDS(ON)Max@ VGS(10V)(mΩ) 15 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 25 mΩ
|VGS(TH)| Max (V) 3.5 V
QG Typ @ |VGS| = 10V (nC) 33.3 nC
CISS Typ (pF) 1871 pF
CISS Condition @|VDS| (V) 50 V

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2425 2019-10-04 2020-01-04 Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and
Additional Wafer Source for Select Products.
PCN-2403 2019-03-25 2019-06-19 Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, Additional Wafer Source, or Additional Assembly and Test site for Select Products.

FAQs

Related Application FAQs