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SO-8.png100V N-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior swtching performance. This device is ideal for use in notebook battery power management and loadswitch.
| AEC Qualified | Yes |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | N |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 100 V |
| |VGS| (±V) | 20 ±V |
| |IDS| @TA = +25°C (A) | 8.9 A |
| PD @TA = +25°C (W) | 1.67 W |
| RDS(ON)Max@ VGS(10V)(mΩ) | 14 mΩ |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 25 mΩ |
| |VGS(TH)| Max (V) | 3 V |
| QG Typ @ |VGS| = 10V (nC) | 33.3 nC |
| CISS Typ (pF) | 1871 pF |
| CISS Condition @|VDS| (V) | 50 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2495 | 2021-03-31 | 2021-07-01 | Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products |
| PCN-2403 | 2019-03-25 | 2019-06-19 | Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, Additional Wafer Source, or Additional Assembly and Test site for Select Products. |
