Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SO-8

Back to DMT10H014LSS

DMT10H014LSS

100V N-Channel Enhancement Mode MOSFET

Datasheet

Contact Sales

Description

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize R_DS(ON), yet maintain superior swtching performance. This device is ideal for use in notebook battery power management and loadswitch.

Feature(s)

100% Unclamped Inductive Switch (UIS) Test in Production
High Conversion Efficiency
Low R_DS(ON) – Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed

Application(s)

Backlighting
Power Management Functions
DC-DC Converters

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)	Standard
AEC Qualified	Yes
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	100 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	8.9 A
P_D @T_A = +25°C (W)	1.67 W
R_DS(ON)Max@ V_GS(10V) (mΩ)	14 mΩ
R_DS(ON)Max@ V_GS(4.5V) (mΩ)	25 mΩ
\|V_GS(TH)\| Max (V)	3 V
Q_G Typ @ \|V_GS\| = 10V (nC)	33.3 nC
C_ISS Typ (pF)	1871 pF
C_ISS Condition @\|V_DS\| (V)	50 V

Technical Documents

SPICE Model

DMT10H014LSS.spice.txt

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

Something went wrong with your request. Please try again later. If this problem continues, please contact Diodes support for assistance.

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2770	2025-10-30	2025-10-30	Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products
PCN-2495	2021-03-31	2021-07-01	Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products