Diodes Incorporated — Analog and discrete power solutions
SO 8

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SO-8

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DMT10H010LSS

100V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Fast Switching Speed
  • Low Threshold
  • Low Gate Drive
  • Low Input Capacitance

Application(s)

  • Power Management Function
  • AC-DC Secondary Retifier
  • LED Boost
  • Chargers
  • Power Supplies
  • Notebooks
  • Adapters
  • Communications

Specifications & Technical Documents

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 100 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 11.5
|IDS| @TC = +25°C (A) 29.5
PD @TA = +25°C (W) 1.9
RDS(ON)Max@ VGS(10V)(mΩ) 9.5 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 14.5 mΩ
|VGS(TH)| Max (V) 2.8 V
QG Typ @ |VGS| = 10V (nC) 58.4 nC
CISS Typ (pF) 4166 pF
CISS Condition @|VDS| (V) 50 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

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