DMT10H009SPSW

100V N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This new generation N-Channel enhancement mode MOSFET is designed to minimize R_DS(ON)yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switches.

Feature(s)

Thermally Efficient Package-Cooler Running Applications
High Conversion Efficiency
100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
Low R_DS(ON)– Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed
<1.1mm Package Profile – Ideal for Thin Applications (PowerDI®)
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions

Application(s)

Motor control
DC-DC converters
Power management

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)	Standard
AEC Qualified	No
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	100 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	14 A
\|I_DS\| @T_C = +25°C (A)	80 A
P_D @T_A = +25°C (W)	2.7 W
P_D @T_C = +25°C (W)	83 W
R_DS(ON)Max@ V_GS(10V) (mΩ)	8.5 mΩ
R_DS(ON)Max@ V_GS(4.5V) (mΩ)	22 (@ 6V) mΩ
\|V_GS(TH)\| Min (V)	2 V
\|V_GS(TH)\| Max (V)	4 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	19 (@ 6V) nC
Q_G Typ @ \|V_GS\| = 10V (nC)	30 nC
C_ISS Typ (pF)	2085 pF
C_ISS Condition @\|V_DS\| (V)	50 V

Technical Documents

SPICE Model

DMT10H009SPSW.spice.txt

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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