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DMT10H009LH3

100V N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
Low On-Resistance
Low Input Capacitance
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)

Application(s)

Motor Control
Backlighting

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	100 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_C = +25°C (A)	84 A
P_D @T_C = +25°C (W)	96 W
R_DS(ON)Max@ V_GS(10V)(mΩ)	9 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	13 mΩ
\|V_GS(TH)\| Max (V)	2.5 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	20.2 nC
C_ISS Typ (pF)	2309 pF
C_ISS Condition @\|V_DS\| (V)	50 V

Technical Documents

SPICE Model

DMT10H009LH3.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2458	2020-07-01	2020-10-01	Qualification of Assembly & Test Site Transfer, and Additional Assembly & Test Site for Select Discrete Products