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PowerDI3333-8.png30V N-CHANNEL ENHANCEMENT MODE MOSFET
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Features and Benefits
- Low RDS(ON) – minimize conduction losses
- Low VSD – reducing the losses due to body diode conduction
- Low QRR – lower QRR of the integrated Schottky reduces body diode switching losses
- Low gate capacitance (Qg/Qgs) ratio – reduces risk of shootthrough or cross conduction currents at high frequencies
Description and Application
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Mechanical Data
| AEC Qualified | Yes |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Automotive |
| Polarity | N |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 30 V |
| |VGS| (±V) | 12 ±V |
| |IDS| @TA = +25°C (A) | 9 A |
| PD @TA = +25°C (W) | 2.1 W |
| RDS(ON)Max@ VGS(10V)(mΩ) | 14.5 mΩ |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 15.5 mΩ |
| |VGS(TH)| Max (V) | 2.2 V |
| QG Typ @ |VGS| = 4.5V (nC) | 19.3 nC |
| QG Typ @ |VGS| = 10V (nC) | 45.7 nC |
| CISS Typ (pF) | 2296 pF |
| CISS Condition @|VDS| (V) | 15 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2522 | 2021-08-24 | 2021-11-24 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly/Test Site Using PdCu or Cu Bond Wire with Standardization of Assembly Bill of Materials for Select Automotive Products |
