DMS3014SFGQ

Features and Benefits

• - DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver:

- Low RDS(ON) – minimize conduction losses
- Low VSD – reducing the losses due to body diode conduction
- Low QRR – lower QRR of the integrated Schottky reduces body diode switching losses
- Low gate capacitance (Qg/Qgs) ratio – reduces risk of shootthrough or cross conduction currents at high frequencies

•  Small form factor thermally efficient package enables higher density end products
• Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
• 100% UIS (Avalanche) Rated
• 100% Rg Tested
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP Capable (Note 4)

Description and Application

This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:

•  Backlighting
• Power Management Functions
• DC-DC Converters

Mechanical Data

• Case: PowerDI®3333-8
• Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections Indicator: See Diagram
• Terminals: Finish  Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208
• Weight: 0.072 grams (Approximate)