Diodes Incorporated — Analog and discrete power solutions
U DFN2020 6 (Type B)

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. U-DFN2020-6 (Type B)

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DMS2220LFDB

P-Channel Enhancement Mode MOSFET with Integrated SBR

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Feature(s)

  • Low On-Resistance
  • 70mΩ @VGS = -4.5V
  • 85mΩ @VGS = -2.5V
  • 86mΩ (typ) @VGS = -1.8V
  • Low Gate Threshold Voltage, -1.3V Max
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Incorporates Low VF Super Barrier Rectifier (SBR®)
  • Low Profile, 0.5mm Max Height
  • Lead Free/RoHS Compliant
  • "Green" Device
  • Qualified to AEC-Q101 Standards for High Reliability
  • Specifications & Technical Documents

    Product Parameters

    Compliance (Only Automotive Supports PPAP)

    Standard

    AEC Qualified

    Yes

    Polarity

    P+SKY

    ESD Diodes (Y|N)

    Yes

    |VDS| (V)

    20 V

    |VGS| (±V)

    12 ±V

    |IDS| @TA = +25°C (A)

    3.5 A

    PD @TA = +25°C (W)

    1.4 W

    RDS(ON)Max@ VGS(4.5V)  (mΩ)

    95 mΩ

    RDS(ON)Max@ VGS(2.5V)  (mΩ)

    120 mΩ

    |VGS(TH)| Min (V)

    0.45 V

    |VGS(TH)| Max (V)

    1.3 V

    CISS Typ (pF)

    632 pF

    CISS Condition @|VDS| (V)

    10 V

    Technical Documents

    SPICE Model

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC

    Purchase & Availability

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    Product Change Notices (PCNs)

    A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

    PCN # Issue Date Implementation Date Subject
    PCN-2770 2025-10-30 2025-10-30 Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products