Diodes Incorporated
U DFN2020 6 Type F

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U-DFN2020-6-Type-F.png
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DMS2220LFDB

P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR

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Feature(s)

  • Low On-Resistance
  • 70mΩ @VGS = -4.5V
  • 85mΩ @VGS = -2.5V
  • 86mΩ (typ) @VGS = -1.8V
  • Low Gate Threshold Voltage, -1.3V Max
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Incorporates Low VF Super Barrier Rectifier (SBR®)
  • Low Profile, 0.5mm Max Height
  • Lead Free/RoHS Compliant
  • "Green" Device
  • Qualified to AEC-Q101 Standards for High Reliability
  • Product Specifications

    Product Parameters

    AEC Qualified Yes
    Compliance (Only Automotive(Q) supports PPAP) Standard
    Polarity P+SKY
    ESD Diodes (Y|N) Yes
    |VDS| (V) 20 V
    |VGS| (±V) 12 ±V
    |IDS| @TA = +25°C (A) 3.5 A
    PD @TA = +25°C (W) 1.4 W
    RDS(ON)Max@ VGS(4.5V)(mΩ) 95 mΩ
    RDS(ON)Max@ VGS(2.5V)(mΩ) 120 mΩ
    |VGS(TH)| Min (V) 0.45 V
    |VGS(TH)| Max (V) 1.3 V
    CISS Typ (pF) 632 pF
    CISS Condition @|VDS| (V) 10 V

    Related Content

    Packages

    Technical Documents

    SPICE Model

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC

    Product Change Notices (PCNs)

    A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

    PCN # Issue Date Implementation Date Subject
    PCN-2425 2019-10-04 2020-01-04 Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and
    Additional Wafer Source for Select Products.