P-Channel Enhancement Mode MOSFET with Integrated SBR
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Compliance (Only Automotive Supports PPAP) |
Standard |
|---|---|
AEC Qualified |
Yes |
Polarity |
P+SKY |
ESD Diodes (Y|N) |
Yes |
|VDS| (V) |
20 V |
|VGS| (±V) |
12 ±V |
|IDS| @TA = +25°C (A) |
2.9 A |
PD @TA = +25°C (W) |
1.5 W |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
95 mΩ |
RDS(ON)Max@ VGS(2.5V) (mΩ) |
120 mΩ |
RDS(ON)Max@ VGS(1.8V) (mΩ) |
150 mΩ |
|VGS(TH)| Min (V) |
0.45 V |
|VGS(TH)| Max (V) |
1.3 V |
CISS Typ (pF) |
632 pF |
CISS Condition @|VDS| (V) |
10 V |
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A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2495 | 2021-03-31 | 2021-07-01 | Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products |
