Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. U-DFN2020-6 (Type B)
P-Channel Enhancement Mode MOSFET with Integrated SCHOTTKY DIODE
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| Compliance (Only Automotive Supports PPAP) | Standard |
|---|---|
| AEC Qualified | Yes |
| Polarity | P+SKY |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 20 V |
| |VGS| (±V) | 12 ±V |
| |IDS| @TA = +25°C (A) | 3.4 A |
| PD @TA = +25°C (W) | 1.64 W |
| RDS(ON)Max@ VGS(4.5V) (mΩ) | 95 mΩ |
| RDS(ON)Max@ VGS(2.5V) (mΩ) | 120 mΩ |
| RDS(ON)Max@ VGS(1.8V) (mΩ) | 150 mΩ |
| |VGS(TH)| Max (V) | 1.3 V |
| QG Typ @ |VGS| = 4.5V (nC) | 7 nC |
