Diodes Incorporated
TO252 DPAK

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DMPH4016SK3

+175°C 40V P-Channel Enhancement Mode MOSFET

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Description

This new generation MOSFET has been designed to minimize the on-state resistance RDS(ON) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature
  • Environments
  • 100% Unclamped Inductive Switch (UIS) Test in Production
  • Low On-Resistance
  • Fast Switching Speed
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

  • DC-DC converters
  • Power-management functions
  • Analog switches

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity P
ESD Diodes (Y|N) No
|VDS| (V) 40 V
|VGS| (±V) 20 ±V
|IDS| @TC = +25°C (A) 80
PD @TA = +25°C (W) 4.9
PD @TC = +25°C (W) 136
RDS(ON)Max@ VGS(10V)(mΩ) 11 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 15 mΩ
|VGS(TH)| Min (V) 1.5 V
|VGS(TH)| Max (V) 2.5 V
QG Typ @ |VGS| = 4.5V (nC) 53 nC
QG Typ @ |VGS| = 10V (nC) 112 nC
CISS Typ (pF) 5697 pF
CISS Condition @|VDS| (V) 20 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf