Diodes Incorporated
SO 8

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DMPH4015SSS (Not Recommended for new design)

NRND = Not Recommended for New Design


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This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.


  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switch (UIS) Test in Production Low On-Resistance
  • Low Input Capacitance


  • DC-DC Converters
  • Power Management Functions
  • Analog Switch

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) Standard
CISS Condition @|VDS| (V) 20
CISS Typ (pF) 4234
Compliance (Only Automotive(Q) supports PPAP) Standard
ESD Diodes (Y|N) No
|IDS| @TA = +25°C (A) 11.4
PD @TA = +25°C (W) 1.8
Polarity P
QG Typ@ VGS = -10V 91
QG Typ@ VGS = -4.5V (nC) 42.7
QG Typ @ |VGS| = 10V (nC) 91
QG Typ @ |VGS| = 4.5V (nC) 42.7
AEC Qualified Yes
RDS(ON)Max@ VGS(10V)(mΩ) 11
RDS(ON)Max@ VGS(4.5V)(mΩ) 15
|VDS| (V) 40
|VGS| (±V) 25
|VGS(TH)| Max (V) 2.5

Technical Documents


Recommended Soldering Techniques


Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products
PCN-2425 2019-10-04 2020-01-04 Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and
Additional Wafer Source for Select Products.


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