Diodes Incorporated
TO252 DPAK

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TO252-DPAK.png
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DMPH4015SK3 (Not Recommended for new design)

NRND = Not Recommended for New Design

175°C P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switch (UIS) Test in Production
  • Low On-resistance
  • Fast Switching Speed

Application(s)

  • DC-DC Converters
  • Power Management Functions
  • Backlighting

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) Standard
CISS Condition @|VDS| (V) 20
CISS Typ (pF) 4234
Compliance (Only Automotive(Q) supports PPAP) Standard
ESD Diodes (Y|N) No
|IDS| @TA = +25°C (A) 14
PD @TA = +25°C (W) 3.3
Polarity P
QG Typ@ VGS = -10V 91
QG Typ@ VGS = -4.5V (nC) 42.7
QG Typ @ |VGS| = 10V (nC) 91
QG Typ @ |VGS| = 4.5V (nC) 42.7
AEC Qualified Yes
RDS(ON)Max@ VGS(10V)(mΩ) 11
RDS(ON)Max@ VGS(4.5V)(mΩ) 15
|VDS| (V) 40
|VGS| (±V) 25
|VGS(TH)| Max (V) 2.5

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf