Diodes Incorporated
PowerDI5060 8

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DMPH4013SPS (Not Recommended for new design)

NRND = Not Recommended for New Design

175°C 40V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8

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Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
  • Low On-Resistance
  • Fast Switching Speed
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Reverse Polarity Protection
  • BLDC Motor Control
  • Power Management Functions

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) Standard
CISS Condition @|VDS| (V) 20
CISS Typ (pF) 4763
Compliance (Only Automotive(Q) supports PPAP) Standard
ESD Diodes (Y|N) No
|IDS| @TC = +25°C (A) 69
PD @TA = +25°C (W) 3.3
Polarity P
QG Typ @ |VGS| = 10V (nC) 87
QG Typ @ |VGS| = 4.5V (nC) 39
AEC Qualified Yes
RDS(ON)Max@ VGS(10V)(mΩ) 13
RDS(ON)Max@ VGS(4.5V)(mΩ) 23
|VDS| (V) 40
|VGS| (±V) 20
|VGS(TH)| Max (V) 3

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products