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DMPH3010LK3

175°C P-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation MOSFET is designed to minimize the on-state resistance (R_DS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switch (UIS) Test in Production
Low On-resistance
Fast Switching Speed

Application(s)

DC-DC Converters
Power Management Functions
Reverse Polarity Protection

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	P
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	30 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	16 A
P_D @T_A = +25°C (W)	3.9 W
R_DS(ON)Max@ V_GS(10V)(mΩ)	7.5 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	10 mΩ
\|V_GS(TH)\| Max (V)	2.1 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	66 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	139 nC
C_ISS Typ (pF)	6807 pF
C_ISS Condition @\|V_DS\| (V)	15 V

Technical Documents

SPICE Model

DMPH3010LK3.spice.txt

Recommended Soldering Techniques

TN1.pdf