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DMPH16M1UPSW

12V 175?C P-Channel Enhancement Mode MOSFET PowerDI5060-8

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON) )yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. 

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
  • High Conversion Efficiency
  • Low RDS(ON) – Minimizes On-State Losses
  • Low Input Capacitance
  • Fast Switching Speed
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Notebook battery power management
  • DC-DC converters
  • Load switches

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Standard

AEC Qualified

No

Polarity

P

ESD Diodes (Y|N)

No

|VDS| (V)

12 V

|VGS| (±V)

8 ±V

|IDS| @TC = +25°C (A)

96 A

PD @TA = +25°C (W)

1.95 W

RDS(ON)Max@ VGS(4.5V)  (mΩ)

6 mΩ

RDS(ON)Max@ VGS(2.5V)  (mΩ)

8 mΩ

|VGS(TH)| Min (V)

0.4 V

|VGS(TH)| Max (V)

1 V

QG Typ @ |VGS| = 4.5V (nC)

75 nC

QG Typ @ |VGS| = 10V (nC)

164 nC

CISS Typ (pF)

5392 pF

CISS Condition @|VDS| (V)

10 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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