Diodes Incorporated
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DMP68D1LFB

65V P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device 
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

  • DC-DC Converters
  • Power Management Functions
  • Battery Operated Systems and Solid-State Relays
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity P
ESD Diodes (Y|N) Yes
|VDS| (V) 65 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 0.29 A
PD @TA = +25°C (W) 1.2 W
RDS(ON)Max@ VGS(4.5V)(mΩ) 8000 (@5V) mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 18000 mΩ
|VGS(TH)| Min (V) 0.8 V
|VGS(TH)| Max (V) 2.1 V
QG Typ @ |VGS| = 4.5V (nC) 0.6 (@5V) nC
CISS Typ (pF) 42 pF
CISS Condition @|VDS| (V) 30 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC