Diodes Incorporated
SO 8

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

SO-8.png
Back to MOSFET Master Table

DMP6110SSSQ

60V P-CHANNEL ENHANCEMENT MODE MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: backlighting, power-management functions, and DC-DC converters.

Feature(s)

  • 100% Unclamped Inductive Switch (UIS) Test in Production
  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/ Output Leakage
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3 )
  • The DMP6110SSSQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Backlighting
  • Power-management functions
  • DC-DC converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity P
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 4.5 A
PD @TA = +25°C (W) 2 W
RDS(ON)Max@ VGS(10V)(mΩ) 110 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 130 mΩ
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 4.5V (nC) 9.5 nC
QG Typ @ |VGS| = 10V (nC) 19.4 nC
CISS Condition @|VDS| (V) 30 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf