Diodes Incorporated
U DFN2020 6 Type F

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DMP6110SFDFQ

P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.

Feature(s)

  • 100% Unclamped Inductive Switching Test in Production – Ensures More Reliable and Robust End Application
  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage

Application(s)

  • Battery Management Application
  • Power Management Functions
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity P
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 3.5 A
PD @TA = +25°C (W) 1.97 W
RDS(ON)Max@ VGS(10V)(mΩ) 110 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 130 mΩ
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 4.5V (nC) 8.2 nC
QG Typ @ |VGS| = 10V (nC) 17.2 nC
CISS Condition @|VDS| (V) 30 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC