Diodes Incorporated
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DMP56D0UFB

P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation 50V P-Channel enhancement mode MOSFET has been designed to minimise RDS(ON) and yet maintain superior switching performance. This device is ideally suited to Handheld application.

Application(s)

  • DC-DC Converters
  • Power Management Functions
  • Battery Operated Systems and Solid-State Relays

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity P
ESD Diodes (Y|N) Yes
|VDS| (V) 50 V
|VGS| (±V) 8 ±V
|IDS| @TA = +25°C (A) 0.2 A
PD @TA = +25°C (W) 0.425 W
RDS(ON)Max@ VGS(4.5V)(mΩ) 6000 (@4V) mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 8000 mΩ
|VGS(TH)| Max (V) 1.2 V
QG Typ @ |VGS| = 4.5V (nC) 0.58 nC
CISS Typ (pF) 50.54 pF

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2299 2018-03-01 2018-06-01 Additional Qualified (A/T) Assembly Test Site