450V P-Channel Enhancement Mode MOSFET
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This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Compliance (Only Automotive Supports PPAP) |
Standard |
|---|---|
AEC Qualified |
No |
Polarity |
P |
ESD Diodes (Y|N) |
No |
|VDS| (V) |
450 V |
|VGS| (±V) |
30 ±V |
|IDS| @TC = +25°C (A) |
4.6 A |
PD @TC = +25°C (W) |
104 W |
RDS(ON)Max@ VGS(10V) (mΩ) |
4900 mΩ |
|VGS(TH)| Max (V) |
5 V |
QG Typ @ |VGS| = 10V (nC) |
13.7 nC |
CISS Typ (pF) |
547 pF |
CISS Condition @|VDS| (V) |
25 V |
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A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2770 | 2025-10-30 | 2025-10-30 | Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products |
