Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.
PowerDI5060-8.png40V P-CHANNEL ENHANCEMENT MODE MOSFET
Contact Sales
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
| AEC Qualified | Yes |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | P |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 40 V |
| |VGS| (±V) | 20 ±V |
| |IDS| @TA = +25°C (A) | 11 A |
| PD @TA = +25°C (W) | 3.4 W |
| RDS(ON)Max@ VGS(10V)(mΩ) | 15 mΩ |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 23 mΩ |
| |VGS(TH)| Max (V) | 3 V |
| QG Typ @ |VGS| = 4.5V (nC) | 31 nC |
| QG Typ @ |VGS| = 10V (nC) | 67 nC |
| CISS Typ (pF) | 4004 pF |
| CISS Condition @|VDS| (V) | 20 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2495 | 2021-03-31 | 2021-07-01 | Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products |
