Diodes Incorporated
X2 DFN0604 3

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DMP32D9UFO

P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • Low Package Profile
  • 0.6mm × 0.4mm Package Footprint
  • Low On-Resistance
  • Very Low Gate Threshold Voltage, -1.0V Max
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS Compliant 
  • Halogen- and Antimony-Free. “Green” Device 
  • For automotive applications requiring specific change control
    (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and
    manufactured in IATF 16949 certified facilities), please
    contact us or your local Diodes representative.
    https://www.diodes.com/quality/product-definitions/

Application(s)

• General Purpose Interfacing Switch
• Power Management Functions
• Analog Switch

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity P
ESD Diodes (Y|N) Yes
|VDS| (V) 30 V
|VGS| (±V) 12 ±V
|IDS| @TA = +25°C (A) 0.2 A
PD @TA = +25°C (W) 0.32 W
RDS(ON)Max@ VGS(4.5V)(mΩ) 5000 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 6000 mΩ
|VGS(TH)| Max (V) 1 V
QG Typ @ |VGS| = 4.5V (nC) 0.35 nC
CISS Typ (pF) 22 pF
CISS Condition @|VDS| (V) 15 V

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2553 2021-11-12 2022-02-12 Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test (A/T) Site with Standardization of Assembly Bill of Materials at CAT for Select Discrete Products

FAQs

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