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DMP31D7LW

P-Channel Enhancement Mode MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)

Application(s)

  • DC-DC Converters
  • Load Switch
  • Power Management Functions

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Standard

AEC Qualified

No

Polarity

P

ESD Diodes (Y|N)

Yes

|VDS| (V)

30 V

|VGS| (±V)

20 ±V

|IDS| @TA = +25°C (A)

0.52 A

PD @TA = +25°C (W)

0.37 W

RDS(ON)Max@ VGS(10V)  (mΩ)

900 mΩ

RDS(ON)Max@ VGS(4.5V)  (mΩ)

1700 mΩ

|VGS(TH)| Max (V)

2.6 V

QG Typ @ |VGS| = 4.5V (nC)

0.36 nC

CISS Typ (pF)

19 pF

CISS Condition @|VDS| (V)

15 V

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2770 2025-10-30 2025-10-30 Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products