Diodes Incorporated
SOT23

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DMP3130LQ

P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AECQ101, supported by a PPAP.

Feature(s)

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage

Application(s)

  • Analog Switch
  • Power Management Functions
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity P
ESD Diodes (Y|N) No
|VDS| (V) 30 V
|VGS| (±V) 12 ±V
|IDS| @TA = +25°C (A) 3.5
PD @TA = +25°C (W) 1.3
RDS(ON)Max@ VGS(10V)(mΩ) 77 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 95 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 150 mΩ
|VGS(TH)| Max (V) 1.3 V
QG Typ @ |VGS| = 4.5V (nC) 5.9 nC
QG Typ @ |VGS| = 10V (nC) 12 nC
CISS Typ (pF) 432 pF
CISS Condition @|VDS| (V) 15 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf