P-Channel Enhancement Mode MOSFET
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This MOSFET is designed to minimize on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
AEC Qualified | No |
---|---|
Compliance (Only Automotive Supports PPAP) | Standard |
Polarity | P |
ESD Diodes (Y|N) | No |
|VDS| (V) | 30 V |
|VGS| (±V) | 20 ±V |
|IDS| @TA = +25°C (A) | 3.4 |
PD @TA = +25°C (W) | 1.2 |
RDS(ON)Max@ VGS(10V)(mΩ) | 70 mΩ |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 130 mΩ |
|VGS(TH)| Min (V) | 1 V |
|VGS(TH)| Max (V) | 2.1 V |
QG Typ @ |VGS| = 4.5V (nC) | 3.8 nC |
QG Typ @ |VGS| = 10V (nC) | 7.5 nC |
CISS Typ (pF) | 366 pF |
CISS Condition @|VDS| (V) | 25 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2720 | 2025-02-12 | 2025-05-13 | Change Lead Frame Type from SOT-23R to SOT-23T for Select Discrete Products |